Abstract
AbstractWe have investigated enhancement of diamond nucleation due to electrode biasing and compared these results with those obtained using substrate biasing. The electrode biasing results in near-surface dc glow discharge with characteristic negative glows and dark regions on both sides of the electrode (cathode). We have studied systematically diamond nucleation density as a function of substrate location with respect to the electrode and gas pressure. Using scanning electron microscopy and Raman spectroscopy, we have determined that a significant enhancement up to 109 cm-2 in diamond nucleation is achieved when the substrate is located in the negative glow region of the near-surface dc glow discharge. It is also found that gas pressure enhances nucleation site density but the quality of diamond decreases. The optimization of these parameters in obtaining high-quality diamond films is discussed.
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