THE CHARACTERISTIC DIODE PARAMETERS IN Ti/p-InP CONTACTS PREPARED BY DC SPUTTERING AND EVAPORATION PROCESSES OVER A WIDE MEASUREMENT TEMPERATURE

Abstract

The titanium/[Formula: see text]-indium phosphide (Ti/[Formula: see text]-InP) Schottky diodes (SDs) have been prepared by thermal evaporation and DC magnetron sputtering deposition. Then, their current–voltage ([Formula: see text]–[Formula: see text]) characteristics have been measured in the sample temperature range of 100–400[Formula: see text]K with steps of 20[Formula: see text]K. The characteristic parameters of both Ti/[Formula: see text]-InP SDs have been compared with each other. The barrier height (BH) values of 0.824 and 0.847 at 300[Formula: see text]K have been obtained for the sputtered and the evaporated SDs, respectively. This low BH value for the sputtered SD has been attributed to some defects introduced by the sputtered deposition technique over a limited depth in to the [Formula: see text]-type substrate. The BH of the evaporated and sputtered diodes has decreased with the standard deviations of 58 and 64[Formula: see text]mV obeying to double-Gaussian distribution (GD) in 220–400[Formula: see text]K range, respectively, and it has seen a more sharper reduction for the BHs with the standard deviations of 93 and 106 mV in 100–220[Formula: see text]K range. The Richardson constant values of 89.72 and 53.24[Formula: see text]A(Kcm)[Formula: see text] (in 220–400[Formula: see text]K range) for the evaporated and sputtered samples, respectively, were calculated from the modified ln([Formula: see text]/[Formula: see text]/2[Formula: see text] vs (kT)[Formula: see text] curves by GD of the BHs. The value 53.24[Formula: see text]A(Kcm)[Formula: see text] for the sputtered sample in high temperatures range is almost the same as the known Richardson constant value of 60[Formula: see text]A(Kcm)[Formula: see text] for [Formula: see text]-type InP.