Abstract
The electroluminescence (EL) of an organic light-emitting diode specially fabricated with a pure thin dye layer 4-(dicyanomethylene)-2-t-butyl-6(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB) of 1-nm thickness inserted at the interface between N,N′-bis-(1-naphthl)-diphenyl-1,1′-biphenyl-4,4′-diamine and tris(8-quinolinolato) aluminum has been investigated. The EL behavior of this device changed dramatically at a driving voltage of about 12.25V, which has been ascribed to the breakage of the thin DCJTB layer. It is suggested that not only such thin layer of DCJTB can transport electrons and holes, but also trap them. A comparison of the EL performance with four other devices confirms this mechanism. Therefore, the high efficiency and long life of the dye doped Alq devices are attributed to the hole and electron trapping effect and the high photoluminescence efficiency of the dye.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
