The calculation for quantized valence subband structure of zinc-blende GaN heterojunction quantum well based on k·p method

Abstract

A quantized valence subband model is proposed to study the energy dispersion of zinc-blende GaN P-channel heterojunction quantum well under arbitrary stress. Anisotropic band structures of bulk GaN and GaN in quantum well under field confinement effect are computed using a six-band stress-dependent k·p Hamiltonian and self-consistently Poisson–Schrödinger equation. A comprehensive study of microscopic relationship between stress and hole effective mass in GaN quantum well has been performed according to the stress effects on quantized valence subband. Simulation results show that uniaxial compression can be considered as the most effective stress in the hole effective mass reduction of zinc-blende GaN heterojunction.