The bulk damaged effects of clustered defects in irradiated silicon detectors

Abstract

In this paper a new semiconductor device model based on deep acceptor states and clustered defects are used to explain the significant fraction of discrepancies in effective doping data from neutron-irradiated devices. It is postulated that the main difference between neutron and gamma damage is in the formation of dense cluster during neutron irradiation. So V2, E70, E170 and P6 defects that are estimated to be present inside the dense cluster will be responsible for leakage current annealing by exchange charge reaction. This mechanism can lead to an increase in electron–hole pair generation rate around two-orders of magnitude. Therefore by using the annealing behavior of leakage current, the concentration and spatial distribution of these defects are calculated and can be used to explain the effective doping concentration versus fluence truly.