Abstract
This study is concerned with the built-in electric field of heterostructures with the quantum wells grown at different depths Lb with respect to the surface. All samples had the same concentration of the two-dimensional electron in the quantum wells AlGaAs/InGaAs/GaAs. The built-in electric field was determined from the photoreflectance spectra of the samples. In case of Lb decreasing, the intensity ratio of two peaks in the photoluminescence spectra increases. The calculation shows that occurred effect originates from the redistribution of doping atom and variation of the surface potential due to the fact that the quantum well is set closer to the surface.
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