Abstract
The morphology of MBE grown GaAs vicinal surfaces is studied using ex situ AFM. Analysing the statistical distribution of terrace width, we succeed in explaining our measurements either by a thermodynamical equilibrium model taking into account the step by step interaction or by a 2D Monte Carlo simulation of the growth. In the latter case, an anisotropic Schwoebel barrier at the step edge has to be introduced in order to get a good agreement. We argue that growth is the efficient process to get a low disordered step array at the usual time scale and temperature range of MBE. In addition the effect of a GaAsAlAs buffer superlattice, or of pure AlAs layer, or of Si doping in GaAs is also discussed.
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