The Bridgman method of (BiAs)2 (TeSe)3 bulk single crystal growth by spontaneous nucleation

Abstract

The Bi0.5As1.5Te2.98Se0.02 single crystal in 11 mm?80 mm size was grown using the Bridgman method. Energy dispersive spectrometry (EDS) analysis was used to determine the chemical composition of the studied samples, as well as for checking and confirming the homogeneity of the samples. Mobility, concentration of charge majority carriers and Hall coefficient of single crystal, were determined using a Hall Effec system based on the Van der Pauw method. Hall Effect was measured at room temperature with four ohmic contacts and at temperature of liquid nitrogen with silver contacts with an applied magnetic field strength of 0.37 T at different current intensities. The expected improvement in the mobility of obtained single crystal doped with this content of arsenic was not obtained.