Abstract
The resistivity of nano-scaled thin nickel film can be controlled so as to be applicable to MEMS-based micro-bolometric infrared image sensor technology. DC-sputtered 60 nm-thick thin nickel film on a SiO 2/Si substrate was oxidized in O 2 ambient. From XRD and electrical analyses, a phase transformation from the metallic nickel film to crystalline nickel oxide films was verified. The thin oxidized nickel films showed a negative TCR (temperature coefficient of resistance (above −3.22%/°C)) which is indicative of a semiconductor behavior. A 1/ f noise result ranging from 1 Hz to 100 Hz was also acquired.
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