Abstract
► ZnO film was fabricated by the sputter deposition using Zn target without O 2 gas. ► Zn film was acid-treated for the sufficient oxidization. ► ZnO layer was used as the compact layer for the prevention of charge recombination. Compact layer preventing the charge recombination has much attention in studies on efficiency enhancement of dye-sensitized solar cells (DSCs). Especially, the charge recombination at the interface between transparent conductive oxide (TCO) and an electrolyte plays an important role due to bad contact of TCO/TiO 2 interface. Although TiO 2 has been widely adopted as a source of the compact layer, ZnO compact layer was investigated in this study because of its unique properties. ZnO thin film was deposited by Zn sputtering without O 2 gas in particular. For the sufficient oxidization of Zn film, the acid treatment was introduced and the thickness of the compact layer was controlled. As a result, the overall performance was much increased from 6.20% to 7.81% by the acid treatment and the thickness control of the compact layer.
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