The binding energies of a bulged GaAs nanowire

Abstract

As it is well-known the electronic structure of the semiconductor nanostructures are so sensitive to alteration of confinement while the nanostructure morphology often determines the confinement. Accordingly existence of a bulge on the wire surface will affect the features of the nanowire. In the present work we consider an on-center hydrogenic donor impurity in a GaAs nanowire with bulge. The ground and first excited states energy levels as well as their binding energies are calculated as functions of bulge and nanowire radius. It is found that both the energy levels and binding energies are strongly influenced by the bulge size for ultrafine nanowires. For large wire radii the effects of bulge existence is trivial and the electronic properties of the system approach to those of the simple nanowire.