The bimetallic synthesis of TeO2–Sb2O4 thin films for optoelectronic applications

Abstract

The current study aimed to synthesize the bimetallic oxide of TeO2–Sb2O4 thin films with different Te weights (0, 10, 20 and 50 wt %.). The chemical vapor deposition (CVD) technique is used for thin film deposition. Various analytical techniques are used for morphological, structural, optical and luminescent characterizations. Results of SEM and XRD indicated that Te contents changed the nucleation and growth rates, hence the regular-irregular morphology. The calculated crystallite size associated with the (222) peak achieved the maximum value of 41.2 nm when Te weight was 10 wt%, in opposite synchronization with both strain and dislocation density. The oxidation kinetics of TeO2–Sb2O4 are well explained. The optical analysis by spectrophotometer showed decrease in NIR transmittance (70 - 40%), direct (1.32–1.25 eV) and indirect band gaps (0.96–0.77 eV) with increasing Te weight. The PL spectra showed immutability and increase of the emission peaks of the mixed phase samples. The broad - intense luminescence peak of the bimetallic alloy encouraged their possible applications in light emitting devices. The mixed TeO2–Sb2O4 films have longer average life time than the unmixed films which might useable in various applications such as nanothermometers and in time-resolved fluorometry.