Abstract
The behavior of oxygen in HgCdTe has been studied using a liquid phase epitaxial growth technique. The oxygen has been found to act as a donor impurity in Hg0.7Cd0.3Te. High-purity Hg0.7Cd0.3Te crystals with carrier concentration of less than 5×1013 cm−3 can be obtained reproducibly by complete deoxidization of the growth solution. As a result, carrier concentration can be controlled accurately within ±1×1014 cm−3.
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Schedule a callMore From: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
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