Abstract
A combination of LEED, AES, TDS and WF measurements was used to study the adsorption of Cs on the basal plane of MoS 2 between 140 and 330 K. The results showed that at low coverage ( θ < 0.1) Cs absorbed with a sticking coefficient of 0.40 independent of substrate temperature and formed strongly ionized isolated adatoms as on metals and other semiconductors. Above θ ∼ 0.1, Cs began to form 2D clusters and the behavior depended on temperature. At 170 K, the growing clusters began to coalesce at θ ∼ 0.60 and became 3D as θ increased from 0.80 to 1.6. At 330 K, coalescence occurred at θ ∼ 0.40 and saturation of the 3D clusters at θ ∼ 0.90. The behaviour at θ > 0.1 is in contrast to the uniform adsorption exhibited by Cs on metal and other semiconductors.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
