Abstract
We have grown chromium-doped forsterite (Mg 2 SiO 4 ) varying growth atmosphere and chromium concentration in the melt in an effort to increase tetravalent chromium absorption. Additionally, samples have been annealed under atmospheres of different oxygen partial pressures. The absorption intensity was gradually saturated in two ways, by increased chromium concentration in the melt or by changing growth oxygen partial pressure. Our results show that the tetravalent chromium ion is able to migrate between silicon site and magnesium site.
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