Abstract
ABSTRACTNanometric inversion domains in GaN/Al2O3 layers have been investigated using HREM. They were found to be limited by {1010} planes and to cross the entire epitaxial layer. It has been possible, using extensive image simulation and matching to discriminate between possible atomic models for the boundary plane. It is shown that the inversion domain boundaries correspond to a Holt type model containing wrong bonds (Ga-Ga, N-N), and in that plane, each atom exhibits two such bonds. This probably can explain the small size of the domains (5–20 nm).
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