Abstract

In this chapter, the basic principles of atomic resolution scanning transmission electron microscopy (STEM) will be described. Particular attention will be paid to the benefits of the incoherent Z-contrast imaging technique for structural determination and the benefits of aberration correction for improved spatial resolution and sensitivity in the acquired images. In addition, the effect that the increased beam current in aberration corrected systems has on electron beam-induced structural modifications of inorganic systems will be discussed. Procedures for controlling the electron dose will be described along with image processing methods that enable quantified information to be extracted from STEM images. Several examples of the use of aberration-corrected STEM for the study of nanoscale systems will be presented; a quantification of vacancies in clathrate systems, a quantification of N doping in GaAs, a quantification of the size distribution in nanoparticle catalysts, and an observation of variability in dislocation core composition along a low-angle grain boundary in SrTiO3. The potential for future standardized methods to reproducibly quantify structures determined by STEM and/or high-resolution TEM will also be discussed.

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