Abstract
The surface morphology of GaAs layers grown by epitaxial lateral overgrowth is studied by Makyoh topography. Bending of the individual stripes of the layer are observed and quantified. Various defects related to the imperfections of the growth are also observed. The results are compared to surface-stylus and X-ray diffraction measurements. The results show that Makyoh technique is a useful tool for simple, fast and routine assessment of such structures.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
