Abstract
The authors have developed a salicide process for CMOS (complementary metal-oxide-semiconductor) applications using ion beam mixing for silicide formation and doped silicide in conjunction with RTA (rapid thermal annealing) drive-in for shallow silicided junction formation and have investigated the fundamental issues related to this process. Specifically, they have studied (i) the effects of ion-beam mixing and RTA on the properties of Ti salicide and the interaction between Ti and SiO/sub 2/; (ii) self-aligned TiN/sub x/O/sub y//TiSi/sub 2/ formation and phase transformation (iii) the mechanism of impurity redistribution and segregation and of junction formation during RTA drive-in; and (iv) the performance and reliability of fabricated salicide devices. Results show that this process may have a great impact on future VLSI (very-large-scale integration) technology. >
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