The Application of GaN/ZnO Heterojunction in Water Splitting

Abstract

Different morphology of ZnO were deposited on GaN substrate using magnetron sputtering method by changing deposition conditions. The ZnO and GaN can form II-type heterojunction due to its higher conduction and lower valence band compared to GaN. The electric field generated by space charge region can separate the photo generated carriers more promptly. In the photocatalytic test, the best performance of GaN/ZnO photoanode with fine crystal quality is about 1.39 times compared to planar GaN. Our research paves a new way for the application of GaN in water splitting performance.