The application of correlated SIMS and RBS techniques to the measurement of ion implanted range profiles

Abstract

A simple, inexpensive secondary ion mass spectrometer (SIMS) instrument is de. scribed and its application to the determination of the range profiles of 20–30 keV Cs + ions implanted into silicon and aluminium targets is demonstrated. The results are compared with those obtained by the alternative method of Rutherford backscattering (RBS) analysis and it is shown that provided the SIMS sputtering yield, S, (which is required for the calculation of the depth scale of the SIMS data) is chosen as a fitting constant, the agreement between the two techniques is excellent. On this basis, therefore, it is proposed that, provided a trace implant of Cs + is included to provide an in-built calibration of S, the SIMS apparatus offers a universal technique for the determination of the profiles of impurities present at concentrations of 1–100 ppm.