Abstract
AbstractThe high‐κ polymer P(VDF‐TrFE‐CFE) is applied in the dielectric layer of a thin film transistor based on graphene, inducing a considerable overall performance improvement compared with conventional SiO2 or ordinary polymer PMMA dielectrics. A systematical study reveals the reason for this improvement to be the strong screening effect on the Coulomb scattering in the dielectric‐semiconductor interface, which originates from the high‐κ value of P(VDF‐TrFE‐CFE). This positive effect is dominant enough to compensate for the adverse effects induced by the application of P(VDF‐TrFE‐CFE), including the large surface roughness and strong phonon scattering. A prototype transistor fabricated on a plastic substrate shows similar superior performance and sustainability upon bending operation, testifying the adaptability of P(VDF‐TrFE‐CFE) in a flexible graphene transistor. This study proposes a high‐κ polymer dielectric that is valid for high‐performing transistors based on 2D semiconductor materials.
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