Abstract
Bulk GaAs and GaP samples, highly doped with Cr, were grown by the liquid encapsulatedCzochralski (LEC) method. Magnetic measurements revealed type I superconductivity withTc≈6.2 Kand Hc∼600 Oe, identical for both compounds. The presence of amorphous inclusions of gallium, due tospecific cellular structures of the defects in the crystals grown by the LEC method, mayexplain existing superconductivity as a result of a phase transition leading toβ-Ga during cooling down of the sample. Since the observed parameters are also close to theparameters characteristic for superconducting Ga II we are not ruling out this possibility.
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