Abstract
Ge - n + p mesa diodes have been produced in 2-Ωcm single crystals using a molecular-beam epitaxy (MBE) process to grow the Sb-doped epitaxial Ge n+-top layer. The diodes are characterized by a leakage current at room temperature of 8×10−4A∕cm2 at a reverse bias of 3 V. The diodes have been used to study irradiation-induced defects in p-type Ge, in particular Sb-related defects, where Sb stems from in-diffusion during the MBE growth. Two lines in the deep level transient spectroscopy (DLTS) spectra are related to the presence of Sb. One of these lines originates from the single-acceptor state of the SbV pair with an enthalpy of ionization of ΔHp=(0.309±0.007)eV, the other from a state with an enthalpy of ionization of ΔHp=(0.095±0.006)eV, which is concluded to be the single donor-charge state of the SbV pair.
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