The antibacterial activity of indium oxide thin film prepared by thermal deposition

Odai N. Salman

doi:10.30723/ijp.v16i37.75

Abstract

Indium oxide In2O3 thin films fabricated using thermal evaporation of indium metal in vacuum on a glass substrate at 25oC using array mask, after deposition the indium films have been subjected to thermal oxidation at temperature 400 °C for 1h. The results of prepared Indium oxide reveal the oxidation method as a strong effect on the morphology and optical properties of the samples as fabricated. The band gap (Eg) of In2O3 films at 400 °C is 2.7 eV. Then, SEM and XRD measurements are also used to investigate the morphology and structure of the indium oxide In2O3 thin films. The antimicrobial activity of indium oxide In2O3 thin films was assessed against gram-negative bacterium using inhibition zone of bacteria which improved higher inactivation rate observed for gram-negative bacteria and reduced resistance of membrane due to reactive oxygen species generated by thermal oxidation.

Highlights

In recent years, preparation and characterization of collection semiconductor materials in nanometer size has been a quickly increasing area of research, because of their excellent chemical and physical properties that are different from those of either bulk material or single atom [1]
The transmittance of indium oxide thin films is measured in the wavelength region 300-1100 nm by using UV-Vis spectrophotometer
In2O3 samples thin films after incubating at 37 oC for overnight demonstrate that films could inhibit the bacterial growth and there is no presence of bacteria on top and bottom of films

Summary

Introduction

Preparation and characterization of collection semiconductor materials in nanometer size has been a quickly increasing area of research, because of their excellent chemical and physical properties that are different from those of either bulk material or single atom [1]. In order to improve the photocatalytic effect of In2O3, researchers have used a variety of techniques, such as morphology control, metal deposition, and combining with semiconductors [3]. N-type semiconductor material has unique optical and optoelectrical characterization but it has catalytic properties that make the compound suitable for using in the photo-degradation of toxic organic compounds, dyes, pigments and other environmental pollutants due to the enhanced photocatalytic activity that was attributed to the high separation and migration efficiency of photo-induced electrons and holes [4, 5]. We determined the morphological and optical properties of array Indium thin film using traditional thermal evaporation method followed with oxidation at temperature 400°C for 1 h. Experimental details Indium thin films are deposited using thermal evaporation method. The antimicrobial activity of Indium oxide In2O3 thin films was assessed against gram-negative bacterium to improve their resistance to growth of bacteria in environmental pollutants

Substrates Vacuum Substrate to film gap

Optical properties

Conclusions