Abstract
This paper proposes a new application to predict the anomalous threshold voltage (Vth) behavior in submicron MOSFETs by using the GM(1,1) grey system model. It can be developed to analyze the threshold voltage inclination due to the device geometric effects. The prediction results are compared with experiment data obtained from actual devices, we found that the different value of real experiment data and estimation data from the GM(1,1) is small and a good agreement has been obtained.
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