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Abstract
Electrical performance was found to be closely related to the variation of nanosized interface morphology. This work investigated in detail the microstructural development of in- and anti-phase bonded interfaces for n-type (100) GaAs wafers treated at 500, 600, 700 and 850 oC. The interfacial energy of anti-phase bonding is higher than that of in-phase bonding based on the first-principles calculations. The higher interface energy tends to stabilize the interfacial oxide layer. The continuous interfacial oxide layer observed below 700 oC behaves to deteriorate the electrical property due to its insulating property. However, the existence of nanoscaled oxide at anti-phase bonded interfaces can improve the electrical conductivity at 700 oC. The reason will be discussed based on the analysis of autocorrelation function from HRTEM (high-resolution transmission electron microscope) and energy dispersive x-ray spectroscopy.
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