The annealing temperature dependence of the RRAM effect and the oxygen vacancy mechanism for double perovskite Bi2FeCrO6 film

Abstract

Resistive random access memory (RRAM) is the most potentially nonvolatile memory of the next generation. In this paper, the double perovskite Bi2FeCrO6 (BFCO) thin films were prepared on FTO/glass using the sol-gel method. And, the resistive switching (RS) phenomena were observed in the Au/BFCO/FTO/glass device annealed at different temperatures. Moreover, the RS behaviors and the mechanism of the Au/BFCO/FTO device were analyzed and discussed, and the RS behaviors could be due to the interaction between the interfacial barrier and oxygen vacancies, and the change of RRAM performance under the annealing temperatures can be attributed to the crystallinity and oxygen vacancy defect content in double perovskite BFCO films, so that, the largest and most stable switching ratios of more than 102 for the BFCO film is achieved annealed at 700 °C. These findings will help us design and fabricate the multiferroic BFCO-based resistive switching memory devices.