Abstract
Abstract An isochronal annealing study has been made of the paramagnetic divacancy in p-type silicon. This damage spectrum has been produced by fast neutron irradiation which previous studies have shown produces damage clusters. The paramagnetic divacancies are shown to anneal at a much higher temperature than the divacancies responsible for infrared absorption in neutron irradiated silicon. The paramagnetic divacancy concentration is fitted to annealing equations with 3 to 7 × 1017 ‚sinks‘/cm3 for divacancies. The divacancy infrared absorption can only be fitted to a special annealing equation with 2 × 1021 “sinks”/cm3. These results provide evidence that the paramagnetic divacancy is outside the damage core of the cluster while the infrared absorption is due to rapidly annealing divacancies inside the heavily damaged core. This supports the damage cluster model for neutron irradiated silicon.
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