Abstract
The annealing kinetics of the F and F+ color centers induced in MgAl2O4 single crystals under irradiation by 156-MeV 132Xe and 2.25-GeV 197Au ions are precisely measured via relevant optical absorption bands and analyzed in terms of the diffusion-controlled reactions between two pairs of anion Frenkel defects which determine thermal stability of irradiated material. It is demonstrated that two types of mobile oxygen interstitials (neutral and charged ones) are involved into recombination process with very different activation energies, which are practically independent on radiation fluencies.
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