Abstract
Tungsten‐nitrogen‐carbide (WNxCy) thin films were investigated as the metal gate of complementary metal‐oxide‐semiconductor (CMOS) devices. WNxCy thin films were deposited by employing the remote plasma atomic layer deposition (RPALD) using a bis(tert‐butylimido) bis (dimethylamido) tungsten (BTBMW) precursor and hydrogen plasma as a reactant. The growth rate of the WNxCy films was about 0.12 nm/cycle. X‐ray diffraction (XRD) analysis indicated that the films consisted of a mixture of tungsten carbide and tungsten nitride phases. The atomic force microscope (AFM) analysis further confirmed that the WNxCy film surfaces deposited by RPALD were smooth. In addition, the chemical bonding state analysis showed that the WNxCy films consisted of WN, WC, and WO phases. To measure the work function of the WNxCy film, a MOSCAP (metal oxide semiconductor capacitor) stack was fabricated and the flat band voltage was measured by current–voltage (C–V) measurements. A WNxCy work function value of 4.91 eV was suitable for p‐MOS and the work function of the WNxCy films varied depending on the annealing treatment, and was higher than the work function of the as‐deposited WNxCy film.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
