Abstract
In this letter we present initial results for the anisotropic deposition of doped silicate glass. The deposition was performed in a previously described low pressure chemical vapor deposition reactor by the reaction of tetraethylorthosilicate, triethyl borate, phosphine, and oxygen. The depositions were performed over a nominal temperature range of 973 to 1023 K. Results presented here indicate that the glass deposits anisotropically over polysilicon structures on silicon substrates favoring high surface density corners to lower surface density flat areas of the silicon substrates.
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