Abstract
The development of methods for the preparation of thin films for surface passivation of semiconductor devices requires the concurrent development of analytical techniques capable of supplying information on the composition of such films. This report describes an evaluation of neutron activation analysis employing 14.5-MeV neutrons for application to the analysis of thin films of silicon dioxide, aluminum oxide and mixed oxide films prepared by chemical vapor deposition (CVD). The limits of detection and the interferences due to other elements are presented. Results of some samples analyzed for silicon and oxygen by chemical methods are compared with those obtained by neutron activation.
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