The analysis of thin cylindrical symmetry lateral collection diodes

Abstract

There is a simple relationship between the diffusion-limited thermal generation leakage current and the result of a point excitation scan experiment on a thin lateral collection photodiode of cylindrical symmetry. This result does not require a knowledge or the determination of minority carrier diffusion lengths. Similarly, the value of the contact recombination velocity is obtainable from the same experiment. Expressions for the minority carrier distributions produced by point-source excitation enable photocurrents for non-uniform illumination to be calculated.