The analysis of mass transfer in system β-SiC–α-SiC under silicon carbide sublimation growth

Abstract

The aim of the present paper is to discuss our results of the investigation (both theoretical and experimental) of mass transfer in the β-SiC–α-SiC system in conditions of about zero temperature gradient. Growth temperature was in the range 1800–2300°C. Modeling of growth of silicon carbide crystals have been carried out both for vacuum (10 −3 Pa) and for a gas (nitrogen, argon or their mixture) atmosphere. The gas pressure was in the range 10 2–10 5 Pa. Growth rate in the range from 0.01 to 1.5 mm/h for growth in vacuum and 0.001–0.15 mm/h for growth in gas have been calculated. Experimental results obtained are in a good agreement with theoretically predicted ones.