The analysis of lateral distribution of barrier height in identically prepared Co/ n-Si Schottky diodes

Abstract

We have studied the experimental linear relationship between ideality factors and barrier heights (BHs) for Co/ n-Si metal–semiconductor (MS) structures with a doping density of about 10 15 cm −3. The barrier heights for the Co/ n-type Si metal–semiconductor structures from the current–voltage ( I–V) characteristics varied from 0.64 to 0.70 eV, the ideality factor n varied from 1.18 to 1.26, and from reverse bias capacitance–voltage ( C −2– V) characteristics the barrier height varied from 0.68 to 0.81 eV. The experimental barrier height distributions obtained from the I–V and C −2– V characteristics were fitted by a Gaussian distribution function, and their mean values were found to be 0.67 and 0.75 eV, respectively. Furthermore, the lateral homogeneous BH value of approximately 0.81 eV for Co/ n-Si metal–semiconductor structures was obtained from the linear relationship between experimental effective BHs and ideality factors.