Abstract
According to the requirement of the CMOS integrated temperature sensor on the device, we analyzed the sub-threshold model of MOS device and the bipolar device under MOS technology. We found the latter is more suitable for a components of CMOS integrated temperature sensor devices. Therefore, we analyzed the influence of the substrate PNP tube’s piezoelectric effect on temperature sensor and compared different types of resistance that lays a theoretical basis for the design of CMOS integrated temperature sensor.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
