Abstract
Magnetic controlled dc sputtering method was used in the deposition of Al-doped ZnO (AZO) transparent conducting thin films. Effects of different process parameters, such as working pressure and substrate temperature, and compare properties of AZO films with RF sputtering in order to obtain best process parameters. Over 80% the transmittance of AZO film are observed at visible region (380 ∼ 780 nm) with DC sputtering. The refraction decreased with increasing substrate temperature while the grain size, carrier concentration and carrier mobility increased with increasing substrate temperature.
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