Abstract
The critical relationship between ion flux and substrate temperature which defines the threshold conditions for the formation of amorphous layers in GaAs at constant ion fluence is measured for the first time. At elevated temperatures, amorphous layers are formed in GaAs by a collapselike process when a critical free energy value is exceeded. The threshold conditions for amorphization are shown to be thermally activated, with an activation energy of 0.9±0.1 eV. However, specific defects and/or processes giving rise to this value are not yet known.
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