Abstract
Schottky barriers have been prepared by the evaporation of aluminium on to bulk-grown n-type InP slices. Reproducible devices were obtained providing sufficient care was taken over the preparation of the semiconductor surface. Current-voltage, capacitance-voltage and photocurrent measurements were made on the diodes. The current measurements showed the ideality factor n, to be close to unity at room temperature and above, indicating that the main mechanism of current flow was thermionic emission. Below room temperature, the ideality factor increased. The capacitance measurements indicated the presence of a deep donor about 1 eV below the conduction band edge. All three measurement techniques gave a calculated value of Schottky barrier height in the region of 0.5 eV. The variation of barrier height with temperature was found to be 4*10-4 eV K-1, which corresponds closely with the temperature variation of the band-gap of InP.
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