Abstract
One of the most attractive characteristics of diluted ferromagnetic semiconductors is the possibility to modulate their electronic and ferromagnetic properties, coupled by itinerant holes through various means. A prominent example is the modification of Curie temperature and magnetic anisotropy by ion implantation and pulsed laser melting in III–V diluted magnetic semiconductors. In this study, to the best of our knowledge, we performed, for the first time, the co-doping of (In,Mn)As diluted magnetic semiconductors by Al by co-implantation subsequently combined with a pulsed laser annealing technique. Additionally, the structural and magnetic properties were systematically investigated by gradually raising the Al implantation fluence. Unexpectedly, under a well-preserved epitaxial structure, all samples presented weaken Curie temperature, magnetization, as well as uniaxial magnetic anisotropies when more aluminum was involved. Such a phenomenon is probably due to enhanced carrier localization introduced by Al or the suppression of substitutional Mn atoms.
Highlights
III-Mn-V diluted ferromagnetic semiconductors (DFSs) have received a great deal of attention because of their enormous potential for spintronic application [1,2] due to their characteristic that electronic and ferromagnetic properties are coupled by itinerant holes [3,4,5,6,7,8]
Ion implantation followed by the pulsed laser melting method provides an alternative solution to this problem due to its second non-equilibrium grown essence, and it has been used in several hyper-doping cases in which some are even impossible to approach by low-temperature molecular beam epitaxy (LT-MBE) [15,16,17]
Even the implanting energy of Mn (100 keV) is much larger than that of Al (60 keV), and the Mn maximal peak appears at a shallower depth (54 nm) than that of Al (67 nm), due to the
Summary
III-Mn-V diluted ferromagnetic semiconductors (DFSs) have received a great deal of attention because of their enormous potential for spintronic application [1,2] due to their characteristic that electronic and ferromagnetic properties are coupled by itinerant holes [3,4,5,6,7,8]. Because the ultra-low solubility of Mn in III–V semiconductors is significantly (normally several orders of magnitude) below the threshold value of appearing ferromagnetism, the preparation of epitaxial DFS film is extremely challenged. Even for the most canonical DFS (Ga,Mn)As, mostly low-temperature molecular beam epitaxy (LT-MBE). Ion implantation followed by the pulsed laser melting method provides an alternative solution to this problem due to its second non-equilibrium grown essence, and it has been used in several hyper-doping cases in which some are even impossible to approach by LT-MBE [15,16,17]. It is important to explore the cohyper-doping effect in various DFSs by ion implantation and pulsed laser melting (PLM)
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