Abstract
Tin selenide (SnSe) and copper tin selenide (Cu2SnSe3) thin films have been deposited onto glass substrates by AACVD using [Sn(Ph2PSe2)2] or a mixture of [Sn(Ph2PSe2)2] and [Cu(acac)2] respectively.
Highlights
Tin selenide (SnSe) is a p-type semiconductor with a direct band gap of 0.9 eV and an indirect band gap of 1.3 eV
Tin selenide (SnSe) and copper tin selenide (Cu2SnSe3) thin films have been deposited onto glass substrates by AACVD using [Sn(Ph2PSe2)2] or a mixture of [Sn(Ph2PSe2)2] and [Cu(acac)2] respectively
Various methods have been used for the deposition of SnSe thin films which include atmospheric pressure chemical vapour deposition (APCVD),[3] pyrolysis,[4] thermal evaporation[5] and chemical bath deposition (CBD).[6]
Summary
Tin selenide (SnSe) is a p-type semiconductor with a direct band gap of 0.9 eV and an indirect band gap of 1.3 eV. The aerosol assisted chemical vapour deposition of SnSe and Cu2SnSe3 thin films from molecular precursors† Tin selenide (SnSe) and copper tin selenide (Cu2SnSe3) thin films have been deposited onto glass substrates by AACVD using [Sn(Ph2PSe2)2] or a mixture of [Sn(Ph2PSe2)2] and [Cu(acac)2] respectively.
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