The Advantages of Double Catalytic Layers for Carbon Nanotube Growth at Low Temperatures (<400 °C) in 3D Stacking and Power Applications

Abstract

A double catalytic layer scheme is proposed and investigated for the low temperature growth of carbon nanotubes (CNTs) over Co (Cobalt), Al (Aluminum), and Ti (Titanium) catalysts on a silicon substrate. In this work, we demonstrate the growth of CNTs by a thermal chemical vapor deposition (TCVD) process at both 350 °C and 400 °C. Based on scanning electron microscopy (SEM) and Raman spectroscopy analyses, the good quality of the CNTs is demonstrated. This study contributes to the on-going research on integrating semiconductors into packaging and power-related applications, as demonstrated with the low resistance (~128 Ω) and high thermal conductivity (~29.8 Wm−1 K−1) of our developed CNTs.