The advantage of silicon carbide material in designing of power bipolar junction transistors

Abstract

The use of Silicon Carbide in designing of power components made exceptional improvements by their high breakdown voltage in the off state, ultra-fast switching with a minimum loss during their turn-On and turn-Off transitions especially at high operating temperatures where silicon power devices reaching their limits of operations. This paper presents a comparative study, through numerical simulation using the finite element method, between a 4H-SiC power bipolar junction transistor and a Silicon power bipolar junction transistor having the same breakdown voltage, 3KV, to highlight the benefits of Silicon Carbide material in their designing.