Abstract
Single crystals of Indium Selenide (InSe) were successfully grown by direct vapor transport method. The grown crystals were characterized by estimating their surface morphology, chemical composition, structural, optical and photoconductive properties using appropriate techniques. SEM image suggested that InSe crystal has layered-type surface without morphological defects. Also, the hexagonal structure of crystal has been confirmed by X-ray diffraction (XRD) spectra and selected area electron diffraction (SAED) pattern. The crystal exhibits high absorption coefficient (104 cm−1) in visible region and direct bandgap of 1.22 eV. The trap depth parameters and photoconductivity parameters were determined by the growth-decay curve and they depend upon illumination intensity, temperature and wavelength of incident light. The grown InSe crystals have excellent photoconductive properties and hence can be utilized in different photoelectrical applications.
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