Abstract
The interaction of water with the atomically clean cleaved (110) indium phosphide surface has been investigated with LEED, Auger electron spectroscopy and angle-resolved photoelectron spectroscopy. At room temperature, it would appear that adsorption takes place in two stages: a rapid stage leading to an ordered overlayer, followed by a much slower disordered adsorption. The initial stage of adsorption is largely molecular in nature but at higher exposures some degree of dissociation is envisaged. The influence of adsorbed water on the Schottky barrier formation at the indium phosphide (110) surface upon subsequent metal deposition was also investigated. The transport properties of the metal-semiconductor contacts were observed to be drastically affected by the presence of the interfacial water layer. The formation of the Schottky barriers at these interfaces is considered with regard to the recent defect model.
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