Abstract
The adsorption of silane, disilane and trisilane on polycrystalline silicon was investigated using temporal analysis of products (TAP) following on admission of a reactant pulse in the temperature range 300–1000 K and at pressures typical for low-pressure chemical vapour deposition. Up to 650 K a slow adsorption process is operative for the three silanes. A quantitative description of the adsorption in this temperature range is possible with a mechanism based on an insertion reaction of the silanes into surface hydrogen bonds. Above 650 K a much faster mode of adsorption is observed, which for the higher silanes is accompanied by silane formation. Homogeneous gas-phase reactions can be excluded. Silane adsorption above 820 K can be described quantitatively with a dual-site adsorption mechanism.
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