Abstract
The activation process of the GaAs negative electron affinity (NEA) photocathode is now well known. Activation supplemented by light illumination has not yet been reported. In this work we have investigated the effects of while light illumination on the adsorption and desorption of Cs and O2 on the GaAs(110) surface during various stages of activation of the GaAs NEA photocathode. Its effects on photoemission sensitivity, emission stability, and recovery of impaired photoemission have also been observed. It is suggested that the incident photons would produce electron–hole pairs on the GaAs surface. Phonons would be produced in recombination of the electrons and holes thus produced. Based upon the above supposition, all the investigated effects are explained and discussed.
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