Abstract
The adsorption of CO on polished (planar) and oxygen etched Si(111) surfaces has been studied by Scanning Electron Microscopy (SEM), Auger Electron Spectroscopy (AES), Electron Stimulated Desorption (ESD), and flash desorption mass spectrometry techniques. Average sticking probabilities, saturation coverages, Arrhenius parameters for desorption, and the effect of reaction etch pits on each of these have been determined. In contrast to what has been reported by other laboratories, we find low sticking probabilities of CO on planar Si surfaces and high saturation coverages. The presence of pits dramatically increases the sticking probabilities and the characteristic desorption temperatures. The low pre-exponential factor in the Arrhenius equation for CO desorbing from the planar and etched surfaces, as well as the anomalous lack of either AES or ESD signals with the adsorption of CO, are discussed in terms of CO penetration below the surface. Preliminary measurements on Si(100) reveal similar features in the desorption and Auger results, suggesting the interaction dynamics are qualitively the same.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
