Abstract
The adsorption of CO on polished (planar) and oxygen etched Si(111) surfaces has been studied by Scanning Electron Microscopy (SEM), Auger Electron Spectroscopy (AES), Electron Stimulated Desorption (ESD), and flash desorption mass spectrometry techniques. Average sticking probabilities, saturation coverages, Arrhenius parameters for desorption, and the effect of reaction etch pits on each of these have been determined. In contrast to what has been reported by other laboratories, we find low sticking probabilities of CO on planar Si surfaces and high saturation coverages. The presence of pits dramatically increases the sticking probabilities and the characteristic desorption temperatures. The low pre-exponential factor in the Arrhenius equation for CO desorbing from the planar and etched surfaces, as well as the anomalous lack of either AES or ESD signals with the adsorption of CO, are discussed in terms of CO penetration below the surface. Preliminary measurements on Si(100) reveal similar features in the desorption and Auger results, suggesting the interaction dynamics are qualitively the same.
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