Abstract
The activation energy for Mg acceptor in AlxGa1-xN alloys is investigated. The modified effective mass model is used to describe the activation energy for Mg acceptor in AlxGa1-xN alloys. It is found that the composition dependence of the activation energy for Mg acceptor in AlxGa1-xN is very different from that in InxGa1-xN. It is mainly due to three factors. In addition, it is found that the energy difference between the Mg acceptor level in AlxGa1-xN and the VBM of GaN is very small in a very large composition range, which is very helpful for us to use the Mg-doped AlGaN/GaN superlattice structures to increase the free-hole concentration.
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